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Infineon IRF8301MTRPBF

Single N-Channel 30 V 1.5 mOhm 51 nC HEXFET® Power Mosfet - DirectFET®

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
676 µm

Physical

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Mount
Surface Mount
Number of Pins
7

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
34 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
1.9 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
17 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
6.14 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.8 W
Min Operating Temperature
-40 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
1.5 mΩ
Package Quantity
4800
Packaging
Tape & Reel
Power Dissipation
2.8 W
Rds On Max
1.5 mΩ
Rise Time
30 ns
Threshold Voltage
1.7 V
Turn-Off Delay Time
25 ns
Turn-On Delay Time
20 ns

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