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onsemi MMBTA42LT1G

Transistor, Bipolar, Si, NPN, High Voltage, VCEO 300VDC, IC 50mA, PD 225mW, SOT-23

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.016 mm
Length
3.0226 mm
Width
1.397 mm

Physical

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Case/Package
SOT-23-3
Contact Plating
Tin
Number of Pins
3
Weight
4.535924 g

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
300 V
Collector Emitter Breakdown Voltage
300 V
Collector Emitter Saturation Voltage
500 mV
Collector Emitter Voltage (VCEO)
300 V
Current Rating
500 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
50 MHz
Gain Bandwidth Product
50 MHz
hFE Min
25
Max Breakdown Voltage
300 V
Max Collector Current
500 mA
Max Frequency
50 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
225 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300 mW
Transition Frequency
50 MHz
Voltage Rating (DC)
300 V

Compliance Documents

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