Skip to main content

onsemi NTJD4401NT1G

Dual N-Channel Small Signal MOSFET with ESD Protection 20V 630mA 375mΩ

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Select to search
related specs
Height
990.6 µm
Length
2.1844 mm
Width
1.3462 mm

Physical

Select to search
related specs
Case/Package
SOT-363-6
Number of Pins
6

Supply Chain

Select to search
related specs
Lifecycle Status
Production

Technical

Select to search
related specs
Continuous Drain Current (ID)
630 mA
Current Rating
630 mA
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
290 mΩ
Drain to Source Voltage (Vdss)
20 V
Element Configuration
Dual
Fall Time
227 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
46 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
270 mW
Min Operating Temperature
-55 °C
Nominal Vgs
920 mV
Number of Channels
2
Number of Elements
2
Packaging
Digi-Reel®
Power Dissipation
270 mW
Rds On Max
375 mΩ
Resistance
220 mΩ
Rise Time
227 ns
Threshold Voltage
920 mV
Turn-Off Delay Time
786 ns
Turn-On Delay Time
83 ns
Voltage Rating (DC)
20 V

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us