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Home > Discrete Semiconductors > Transistors > Mosfets > SAMSUNG SSP4N60A N-Channel MOSFET Transistor 4A 600V TO-220

SAMSUNG SSP4N60A N-Channel MOSFET Transistor 4A 600V TO-220

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Samsung - Samsung Ssp4N60A Strt Lea Ds 50/Tube IC

SAMSUNG SSP4N60A N-Channel MOSFET Transistor 4A 600V TO-220

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Details

SAMSUNG SSP4N60A 4A, 600V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220

Type Designator: SSP4N60

Type of SSP4N60 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 75

Maximum drain-source voltage |Uds|, V: 600

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4

Maximum junction temperature (Tj), °C: 150

Rise Time of SSP4N60 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO220

Additional Information

SSP4N60A
Click here to Download Datasheet I
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