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Home > Semiconductors > Discrete Semiconductors > Diodes & Rectifiers > Transistors > MMBT4401 TRANSISTOR GP NPN AMP SOT-23 MMBT4401

MMBT4401 TRANSISTOR GP NPN AMP SOT-23 MMBT4401

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Quick Overview

Samsung - Sam Mmbt4401 Sot-23 Diode Transistor; Transistor Type:Bipolar; Transistor Polarity:N Channel; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):20; C-E Breakdown Voltage:40V; Collector Current:0.6A; DC Current Gain Max (hfe):300

MMBT4401 TRANSISTOR GP NPN AMP SOT-23 MMBT4401

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Details

MMBT4401 Bipolar Transistors - BJT SOT-23 NPN GEN PUR Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 310mW Surface Mount SOT-23-3
This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA.
Applications
This product is general usage and suitable for many different applications.

Additional Information

MMBT4401-SAM
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