onsemi TIP31C

Tube Through Hole NPN Single Bipolar (BJT) Transistor 10 @ 3A 4V 3A 40W 3MHz

Datasheet

Product Details

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Compliance

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Lead Free

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS

Compliant

Dimensions

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Height

16.51 mm

Length

10.67 mm

Width

4.83 mm

Physical

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Case/Package

TO-220

Contact Plating

Tin

Mount

Through Hole

Number of Pins

3

Weight

1.214 g

Technical

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Collector Base Voltage (VCBO)

100 V

Collector Emitter Breakdown Voltage

100 V

Collector Emitter Saturation Voltage

1.2 V

Collector Emitter Voltage (VCEO)

100 V

Current Rating

3 A

Element Configuration

Single

Emitter Base Voltage (VEBO)

5 V

Frequency

3 MHz

Gain Bandwidth Product

3 MHz

hFE Min

10

Max Breakdown Voltage

100 V

Max Collector Current

3 A

Max Frequency

3 MHz

Max Operating Temperature

150 °C

Max Power Dissipation

40 W

Min Operating Temperature

-65 °C

Number of Elements

1

Packaging

Bulk

Polarity

NPN

Power Dissipation

40 W

Transition Frequency

3 MHz

Voltage Rating (DC)

100 V

Compliance Documents

Datasheet

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