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Home > Discrete Semiconductors > Transistors > Fairchild MMBT2907 Bipolar (BJT) Single Transistor, PNP, 40 V, 350 mW, 800 mA

Fairchild MMBT2907 Bipolar (BJT) Single Transistor, PNP, 40 V, 350 mW, 800 mA

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Quick Overview

Fairchild Semiconductor Mmbt2907 Transistor Sot-23 ; Transistor Type:Bipolar; Transistor Polarity:Dual P Channel; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):30; C-E Breakdown Voltage:40V; Collector Current:0.8A; DC Current Gain Max (hfe):300

Fairchild MMBT2907 Bipolar (BJT) Single Transistor, PNP, 40 V, 350 mW, 800 mA

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Fairchild Semiconductor MMBT2907 PNP Transistor 40V 0.35W 800mA Surface Mount / SMD SOT-23

This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63.

Fairchild Semiconductor's portfolio of power semiconductor, discrete semiconductor, analog signal and switch, logic, and optoelectronic products serves diversified markets and applications, including mobile, computing, communications, consumer, energy conversion, LED lighting, motor control, network communications, industrial, and automotive. Their high performance semiconductor products are optimized for power sensitive and mobile applications. All manufacturing locations across Fairchild are certified to ISO/TS16949:2002 industry standards to provide consistently reliable, robust and high quality products.

Additional Information

Manufacturer: Fairchild Semiconductor
Product Category: Bipolar Transistors - BJT
Configuration: Single
Transistor Polarity: PNP
Collector- Base Voltage VCBO: 60 V
Collector- Emitter Voltage VCEO Max: 40 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 1.6 V
Maximum DC Collector Current: 0.8 A
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: SOT-23
Brand: Fairchild Semiconductor
Pd - Power Dissipation: 350 mW
Click here to Download Datasheet I
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