onsemi MMBT3906LT1G

Single Bipolar Transistor, PNP, 40 V, 200 mA, 225 mW, SOT-23, 3 Pin, Surface Mount

Datasheet

Product Details

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Compliance

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Lead Free

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS

Compliant

Dimensions

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Height

940 µm

Length

2.9 mm

Width

1.3 mm

Physical

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Case/Package

SOT-23

Contact Plating

Tin

Number of Pins

3

Supply Chain

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Lifecycle Status

Production

Technical

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Collector Base Voltage (VCBO)

-40 V

Collector Emitter Breakdown Voltage

-40 V

Collector Emitter Saturation Voltage

-400 mV

Collector Emitter Voltage (VCEO)

-40 V

Current Rating

-200 mA

Element Configuration

Single

Emitter Base Voltage (VEBO)

-5 V

Frequency

250 MHz

Gain Bandwidth Product

250 MHz

hFE Min

30

Max Breakdown Voltage

40 V

Max Collector Current

-200 mA

Max Frequency

250 MHz

Max Junction Temperature (Tj)

150 °C

Max Operating Temperature

150 °C

Max Power Dissipation

300 mW

Min Operating Temperature

-55 °C

Number of Elements

1

Packaging

Tape and Reel

Polarity

PNP

Power Dissipation

300 mW

Transition Frequency

250 MHz

Voltage Rating (DC)

-40 V

Compliance Documents

Datasheet

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Availability

99,209

Lead Time (weeks)

30

Unit Price

$0.0323

Total Price

$32.30

Minimum: 1,000

Multiples: 1,000

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