Country Flags IBS Electronics USA IBS Electronics Mexico IBS Electronics Philippines IBS Electronics China IBS Electronics Malaysia IBS Electronics India IBS Electronics Hong Kong IBS Electronics Singapore
Home > Discrete Semiconductors > Transistors > KSA931Y Samsung PNP BJT Transistor 60V 0.7A TO-92

KSA931Y Samsung PNP BJT Transistor 60V 0.7A TO-92

Be the first to review this product

Availability: In stock

Only 50000 left

  • Buy 10 for $0.2000 each and save 48%
  • Buy 50 for $0.1500 each and save 61%
  • Buy 100 for $0.1000 each and save 74%
  • Buy 500 for $0.0800 each and save 79%
  • Buy 1000 for $0.0700 each and save 82%
  • Buy 2000 for $0.0500 each and save 87%

Quick Overview

Samsung Ksa931Y Ksa931-Y-Sh Smd Diode Trans GP BJT PNP 60V 0.7A 3-Pin TO-92L

KSA931Y Samsung PNP BJT Transistor 60V 0.7A TO-92

Double click on above image to view full picture

Zoom Out
Zoom In

More Views


Samsung KSA931Y General Purpose PNP BJT Transistor 60V 0.7A TO-92 Through Hole

The KSA931Y transistor might have a current gain anywhere between 120 and 240. The gain of the KSA931 will be in the range from 40 to 240, KSA931R ranges from 40 to 80, KSA931O ranges from 70 to 140.

Additional Information

Manufacturer: Samsung Semiconductor
Product Category: Bipolar Transistors - BJT
Configuration: Single
Transistor Polarity: PNP
Collector- Base Voltage VCBO: - 80 V
Collector- Emitter Voltage VCEO Max: - 60 V
Emitter- Base Voltage VEBO: - 8 V
Collector-Emitter Saturation Voltage: - 0.3 V
Maximum DC Collector Current: 0.7 A
Gain Bandwidth Product fT: 100 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package / Case: TO-92
Pd - Power Dissipation: 1 W
DC Collector/Base Gain hfe Min: 40
© 1994 - 2022 IBS Electronics Inc. All rights Reserved.    •    Call Now: 1-800-717-6475     Go to Top  Go to Top of Page