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STMicroelectronics 2N2219A

Bipolar (BJT) Transistor NPN 30 V 800 mA 250MHz 800 mW Through Hole TO-39

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Diameter
9.4 mm
Height
6.6 mm
Length
9.4 mm
Width
9.4 mm

Physical

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Case/Package
TO-39
Mount
Through Hole
Number of Pins
3
Weight
4.535924 g

Technical

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Collector Base Voltage (VCBO)
75 V
Collector Emitter Breakdown Voltage
40 V
Collector Emitter Saturation Voltage
1 V
Collector Emitter Voltage (VCEO)
40 V
Current
6 A
Current Rating
600 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
300 MHz
Gain Bandwidth Product
300 MHz
hFE Min
40
Max Collector Current
600 mA
Max Frequency
300 MHz
Max Operating Temperature
175 °C
Max Power Dissipation
800 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Bulk
Polarity
NPN
Power Dissipation
800 mW
Transition Frequency
300 MHz
Voltage
40 V
Voltage Rating (DC)
75 V

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