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STMicroelectronics STD80N6F6

Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
4.6 mm
Length
10.4 mm
Width
9.35 mm

Physical

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Case/Package
DPAK
Mount
Surface Mount
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
80 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
5 mΩ
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
7.48 nF
Max Operating Temperature
175 °C
Max Power Dissipation
120 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Digi-Reel®
Power Dissipation
120 W
Rds On Max
6.5 mΩ
Resistance
5 mΩ

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