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onsemi FQD13N06LTM

N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, DPAK

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
2.39 mm
Length
6.73 mm
Width
6.22 mm

Physical

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Case/Package
DPAK
Mount
Surface Mount
Number of Pins
3
Weight
260.37 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
11 A
Current Rating
11 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
115 mΩ
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Fall Time
40 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
350 pF
Max Operating Temperature
150 °C
Max Power Dissipation
2.5 W
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
2.5 W
Rds On Max
115 mΩ
Resistance
115 mΩ
Rise Time
90 ns
Threshold Voltage
2.5 V
Turn-Off Delay Time
20 ns
Turn-On Delay Time
8 ns
Voltage Rating (DC)
60 V

Compliance Documents

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