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onsemi FQD13N06LTM

N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, DPAK

Product Details

Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
2.39 mm
Length
6.73 mm
Width
6.22 mm

Physical

Case/Package
DPAK
Mount
Surface Mount
Number of Pins
3
Weight
260.37 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
11 A
Current Rating
11 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
115 mΩ
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Fall Time
40 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
350 pF
Max Operating Temperature
150 °C
Max Power Dissipation
2.5 W
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
2.5 W
Rds On Max
115 mΩ
Resistance
115 mΩ
Rise Time
90 ns
Threshold Voltage
2.5 V
Turn-Off Delay Time
20 ns
Turn-On Delay Time
8 ns
Voltage Rating (DC)
60 V

Compliance Documents

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