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onsemi FQP34N20

Power MOSFET, N-Channel, QFET®, 200 V, 31 A, 75 mΩ, TO-220

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
9.4 mm
Length
10.1 mm
Width
4.7 mm

Physical

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Case/Package
TO-220AB
Mount
Through Hole
Number of Pins
3
Weight
1.8 g

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
31 A
Current Rating
31 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
75 mΩ
Drain to Source Voltage (Vdss)
200 V
Element Configuration
Single
Fall Time
115 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
3.1 nF
Max Operating Temperature
150 °C
Max Power Dissipation
180 W
Min Operating Temperature
-55 °C
Nominal Vgs
5 V
Number of Elements
1
Power Dissipation
180 W
Rds On Max
75 mΩ
Rise Time
280 ns
Threshold Voltage
5 V
Turn-Off Delay Time
125 ns
Turn-On Delay Time
40 ns
Voltage Rating (DC)
200 V

Compliance Documents

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