Skip to main content

onsemi FQT7N10TF

Power MOSFET, N-Channel, QFET®, 100 V, 1.7 A, 350 mΩ, SOT-223

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Select to search
related specs
Height
1.7 mm
Length
6.7 mm
Width
3.7 mm

Physical

Select to search
related specs
Case/Package
SOT-223
Mount
Surface Mount
Number of Pins
3
Weight
188 mg

Supply Chain

Select to search
related specs
Lifecycle Status
Production

Technical

Select to search
related specs
Continuous Drain Current (ID)
1.7 A
Current Rating
-1 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
350 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
19 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
250 pF
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
2 W
Rds On Max
350 mΩ
Resistance
350 mΩ
Rise Time
24 ns
Threshold Voltage
4 V
Turn-Off Delay Time
13 ns
Turn-On Delay Time
7 ns
Voltage Rating (DC)
-100 V

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us