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onsemi FQT7N10TF

Power MOSFET, N-Channel, QFET®, 100 V, 1.7 A, 350 mΩ, SOT-223

Product Details

Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.7 mm
Length
6.7 mm
Width
3.7 mm

Physical

Case/Package
SOT-223
Mount
Surface Mount
Number of Pins
3
Weight
188 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
1.7 A
Current Rating
-1 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
350 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
19 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
250 pF
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
2 W
Rds On Max
350 mΩ
Resistance
350 mΩ
Rise Time
24 ns
Threshold Voltage
4 V
Turn-Off Delay Time
13 ns
Turn-On Delay Time
7 ns
Voltage Rating (DC)
-100 V

Compliance Documents