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STMicroelectronics STP33N60M2

N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-220 package

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
125 mΩ

Physical

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Case/Package
TO-220-3
Contact Plating
Tin
Mount
Through Hole
Weight
329.988449 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
26 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
108 mΩ
Drain to Source Voltage (Vdss)
600 V
Element Configuration
Single
Fall Time
9 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
1.781 nF
Max Operating Temperature
150 °C
Max Power Dissipation
190 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
190 W
Rds On Max
125 mΩ
Rise Time
9.6 ns
Turn-Off Delay Time
109 ns
Turn-On Delay Time
16 ns

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