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UTC’s new product launch, the 4N120 N-Channel Power MOSFET, is a device designed for fast switching applications with a low on-resistance of 4.0 A and a maximum drain-source voltage of 55 V. The 4N120 is a dual N-channel MOSFET packaged in a small surface-mount SOP-8 package, making it suitable for use in a wide range of electronic applications.
The 4N120 has a relatively low gate capacity of 250 μA, allowing it to switch quickly and efficiently. This is especially useful in applications such as load switching and pulse width modulation (PWM), where fast switching is essential. The typical threshold voltage of the 4N120 is 3.0 V, with a maximum of 6.0 V, making it easy to control and operate with low gate voltages.
The 4N120 is rated for a maximum junction temperature of 150 °C, ensuring that it can operate effectively in high-temperature environments. This makes it well-suited for use in a wide range of industrial, automotive, and other applications where high temperatures are common. Additionally, the 4N120 has a maximum power dissipation of 2 W at 25°C, allowing it to handle high power loads without the risk of thermal failure.
UTC’s 4N120 N-Channel Power MOSFET is a valuable addition to UTC’s product portfolio, offering engineers and designers a high-performance, low-cost, and compact solution for a wide range of fast switching applications. The device is available through IBS Electronics, providing a wide selection of semiconductors & electronic components and engineering support services to help customers select the right UTC product for their specific needs.
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