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Vishay SI7850DP-T1-E3

Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SI7850DP-T1-E3/BKN)

Product Details

Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
1.04 mm
Length
4.9 mm
Width
5.89 mm

Physical

Case/Package
SOIC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8

Technical

Continuous Drain Current (ID)
6.2 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
18 mΩ
Drain to Source Voltage (Vdss)
60 V
Dual Supply Voltage
60 V
Element Configuration
Single
Fall Time
10 ns
Gate to Source Voltage (Vgs)
20 V
Manufacturer Package Identifier
S17-0173-Single
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.8 W
Min Operating Temperature
-55 °C
Nominal Vgs
3 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
1.8 W
Rds On Max
22 mΩ
Resistance
22 mΩ
Rise Time
10 ns
Termination
SMD/SMT
Threshold Voltage
3 V
Turn-Off Delay Time
25 ns
Turn-On Delay Time
10 ns

Compliance Documents

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