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Home Products Discrete Semiconductors Transistors MOSFETs BSS123-7-F

DIODES INC. BSS123-7-F

Diodes Inc BSS123-7-F N‑channel MOSFET, 100 V VDS, 0.17 A ID, RDS(on) 6 Ω @ VGS=10 V, PD 300 mW, SOT‑23 3‑pin surface‑mount, enhancement mode, VGS(max) ±20 V, VGS(th) max 2 V, RoHS compliant
Datasheet
BSS123-7-F by DIODES INC. is an N-MOSFET transistor with 100V Vdss, 170mA Id, 6Ω Rds(on), 300mW power dissipation, and operates from -55°C to 150°C in a SOT-23 package.

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related specs
RoHS
Compliant
Lifecycle Status
Not Specified
Mount
Surface Mount
Case/Package
SOT-23
Packaging
Cut Tape
Rds On Max
6 Ω
Power Dissipation
300 W
Threshold Voltage
2 V
Input Capacitance
60 F
Gate to Source Voltage (Vgs)
20 V
Continuous Drain Current (ID)
0.17 A
Drain to Source Voltage (Vdss)
100 V
Datasheet
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