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Home Products Discrete Semiconductors Transistors MOSFETs IRFP4668PBF

INFINEON IRFP4668PBF

Infineon HEXFET N-channel power MOSFET IRFP4668PBF, 200 V, 130 A, RDS(on) 9.7 mΩ, gate charge 161 nC, 520 W dissipation, TO-247AC package, through-hole, 3 leads + tab
Datasheet
IRFP4668PBF N-CHANNEL MOSFET TRANSISTOR 130 A 200 V 3-PIN TO-247AC

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related specs
Lead Free
Lead Free
Mount
Through Hole
Case/Package
TO-247-3
Lifecycle Status
Production (Last Updated: 4 years ago)
Termination
Through Hole
Contact Plating
Tin
Element Configuration
Single
Number of Channels
1
Number of Pins
3
Number of Elements
1
Rds On Max
0.0097 Ω
Power Dissipation
520 W
Continuous Drain Current (ID)
130 A
Drain to Source Voltage (Vdss)
200 V
Datasheet
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$3.4404
Total Price
$3.4404
Multiples: 5
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