IXYS IXTP4N65X2

IXTP4N65X2 BY IXYS SEMICONDUCTOR IS A N-CHANNEL POWER MOSFET WITH A DRAIN-SOURCE VOLTAGE OF 650V CONTINUOUS DRAIN CURRENT OF 4.2A RDS(ON) OF 1.2 AND A GATE THRESHOLD VOLTAGE OF 2V DESIGNED FOR HIGH-VOLTAGE SWITCHING APPLICATIONS.