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NEXPERIA 2N7002F

POWER FIELD-EFFECT TRANSISTOR 0.475A I(D) 1-ELEMENT N-CHANNEL METAL-OXIDE SEMICONDUCTOR FET

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Technical

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related specs
RoHS
Compliant
Mount
Surface Mount
Packaging
Cut Tape
Case/Package
SOT-23
Number of Pins
3
Number of Elements
1
Power Dissipation
0.83 W
Threshold Voltage
2 V
Continuous Drain Current (ID)
0.475 A
Drain to Source Voltage (Vdss)
60 V

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