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NEXPERIA BUK9Y12-100E115

BUK9Y12-100E115, NEXPERIA, Mosfets
POWER FIELD-EFFECT TRANSISTOR 85A I(D) 1-ELEMENT N-CHANNEL METAL-OXIDE SEMICONDUCTOR FET

Product Details

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Technical

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related specs
Mount
Surface Mount
Packaging
Tape & Reel
Termination
Crimp
Case/Package
SOT
Lifecycle Status
In Production
Element Configuration
Single
Plating
Lead, Tin
Material
Brass
Number of Pins
4
Number of Channels
1
Power Dissipation
238 W
Rds On Max
12 Ω
Threshold Voltage
1.7 V
Input Capacitance
7973 F
Gate to Source Voltage (Vgs)
10 V
Continuous Drain Current (ID)
85 A
Drain to Source Voltage (Vdss)
100 V

Purchase

Availability
102,000
Ships in 16 Days
102,000

Lead Time (weeks)
13

Unit Price
$7.6704
Total Price
$11,505.60
Minimum: 1,500
Multiples: 1,500
Quantity must be in multiples of 1,500
Request a Quote
1 - 2,999
$7.6704
3,000 - 4,499
$1.1139
4,500 +
$1.09275

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