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NEXPERIA NX2301P215

NX2301P215 by NEXPERIA is a P-Channel TrenchMOS FET with 20V, 120mOhm RDS(on), 400mW power dissipation, in SOT-23 package, operating from -55°C to 150°C.

Product Details

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Technical

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related specs
Packaging
Tape & Reel
Lifecycle Status
Production (Last Updated: 2 months ago)
Power Dissipation
0.4 W
Gate to Source Voltage (Vgs)
8 V
Continuous Drain Current (ID)
-2 A
Drain to Source Voltage (Vdss)
-20 V

Purchase

Availability
2,325,000
Ships in 16 Days
2,325,000

Unit Price
$0.3807
Total Price
$1,142.10
Minimum: 3,000
Multiples: 3,000
Quantity must be in multiples of 3,000
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1 - 5,999
$0.3807
6,000 - 8,999
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$0.37365

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