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NEXPERIA PMPB10XNE115
POWER FIELD-EFFECT TRANSISTOR 12.9A I(D) 1-ELEMENT N-CHANNEL METAL-OXIDE SEMICONDUCTOR FET
Product Details
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RoHS
Compliant
Lead Free
Lead Free
Mount
Surface Mount
Lifecycle Status
In Production
Packaging
Tape & Reel (TR)
Case/Package
SOT
Power Dissipation
12.5 W
Threshold Voltage
0.9 V
Input Capacitance
2175 F
Gate to Source Voltage (Vgs)
12 V
Continuous Drain Current (ID)
9 A
Drain to Source Voltage (Vdss)
20 V
Rds On Max
14 Ω
Purchase
Availability
3,000
Ships in 16 Days
3,000
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