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ONSEMI 2SA1962RTU

BIPOLAR TRANSISTORS - BJT PNP EPITAXIAL SILICON

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Technical

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related specs
RoHS
Compliant
Polarity
PNP
Lifecycle Status
EOL (Last Updated: 2 months ago)
Mount
Through Hole
Contact Plating
Tin
Element Configuration
Single
hFE Min
55
Number of Elements
1
Power Dissipation
130 W
Transition Frequency
30000000 Hz
Max Collector Current
17 A
Collector Emitter Breakdown Voltage
250 V

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