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ONSEMI BCP56T1G

ON Semiconductor BCP56T1G NPN bipolar junction transistor (BJT), general-purpose, 80 V Vce, 1 A Ic, 1.5 W power dissipation, SOT-223 (4-pin 3+tab) surface-mount, transition frequency 130 MHz, DC current gain hFE 40–250
ON SEMI BCP56T1G NPN BIPOLAR TRANSISTOR, 1 A, 80 V SOT-223 | ON SEMICONDUCTOR BCP56T1G

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Technical

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related specs
Lifecycle Status
Not Specified
Mount
Surface-mount
Case/Package
SOT-223-4
Packaging
Tape and Reel
Polarity
NPN
hFE Min
40
Power Dissipation
1.5 W
Transition Frequency
130 Hz
Max Collector Current
1 A
Collector Emitter Breakdown Voltage
80 V

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Availability
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Unit Price
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Total Price
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