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ONSEMI FJA4313RTU

BIPOLAR TRANSISTORS - BJT NPN EPITAXIAL SILICON TRANSISTOR

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Technical

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related specs
RoHS
Compliant
Lead Free
Lead Free
Mount
Through Hole
Lifecycle Status
Obsolete (Last Updated: 3 years ago)
Element Configuration
Single
Polarity
NPN
Number of Pins
3
hFE Min
55
Number of Elements
1
Max Collector Current
17 A
Collector Emitter Breakdown Voltage
250 V
Collector Emitter Saturation Voltage
0.4 V
Power Dissipation
130 W
Transition Frequency
30000000 Hz

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