Skip to main content

ONSEMI FQD2N100TM

N-CHANNEL POWER MOSFET QFET® 1000 V 1.6 A 9 Ω DPAK

Product Details

Find similar products  

Technical

Select to search
related specs
RoHS
Compliant
Lead Free
Lead Free
Case/Package
DPAK
Mount
Surface Mount
Packaging
Cut Tape
Lifecycle Status
Production (Last Updated: 3 years ago)
Contact Plating
Tin
Element Configuration
Single
Number of Channels
1
Number of Pins
3
Number of Elements
1
Rds On Max
9 Ω
Power Dissipation
2.5 W
Threshold Voltage
5 V
Input Capacitance
0.52 F
Gate to Source Voltage (Vgs)
30 V
Continuous Drain Current (ID)
1.6 A
Drain to Source Voltage (Vdss)
1000 V

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us