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ONSEMI FQI4N90TU

N-CHANNEL POWER MOSFET QFET® 900 V 4.2 A 3.3 Ω I2PAK

Product Details

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related specs
RoHS
Compliant
Lead Free
Lead Free
Mount
Through Hole
Lifecycle Status
Obsolete (Last Updated: 2 months ago)
Element Configuration
Single
Case/Package
TO-262
Number of Channels
1
Number of Elements
1
Power Dissipation
3.13 W
Rds On Max
3.3 Ω
Input Capacitance
0 F
Gate to Source Voltage (Vgs)
30 V
Continuous Drain Current (ID)
4.2 A
Drain to Source Voltage (Vdss)
900 V

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