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RENESAS RJK0328DPB-01#J0

Power MOSFET, N-channel, 30 V drain-source, 60 A drain current, RDS(on) 2.1 mΩ; 2.9 mΩ @ VGS=4.5 V, 65 W power dissipation, LFPAK56 (SC-100/SOT-669) surface-mount package, single device
POWER FIELD-EFFECT TRANSISTOR, 45A I(D), 1-ELEMENT, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET

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related specs
Lifecycle Status
Not Specified
Mount
Surface Mount
Packaging
Digi-Reel®
Case/Package
LFPAK56 (SC-100/SOT-669)
Rds On Max
2.9 Ω
Power Dissipation
65 W
Gate to Source Voltage (Vgs)
4.5 V
Continuous Drain Current (ID)
60 A
Drain to Source Voltage (Vdss)
30 V

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