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ROHM HT8KE6HTB1
HT8KE6HTB1,ROHM,POWER FIELD-EFFECT TRANSISTOR 12.5A I(D) 100V 0.088OHM 2-ELEMENT N-CHANNEL SILICON METAL-OXIDE SEMICONDUCTOR FET
HT8KE6HTB1 BY ROHM IS A DUAL N-CHANNEL POWER MOSFET FEATURING 12.5A DRAIN CURRENT 100V DRAIN-SOURCE VOLTAGE 0.088 OHM RDS(ON) SILICON METAL-OXIDE CONSTRUCTION IDEAL FOR HIGH-EFFICIENCY SWITCHING APPLICATIONS.