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STMICROELECTRONICS SCT20N120

SILICON CARBIDE POWER MOSFET 1200 V 20 A 189 MOHM (TYP. TJ = 150 C) IN AN HIP247 PACKAGE

Product Details

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Technical

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related specs
RoHS
Compliant
Lead Free
Lead Free
Mount
Through Hole
Case/Package
TO-247-3
Element Configuration
Single
Lifecycle Status
Production (Last Updated: 3 years ago)
Number of Channels
1
Rds On Max
0.239 Ω
Input Capacitance
0.65 F
Gate to Source Voltage (Vgs)
25 V
Continuous Drain Current (ID)
20 A
Drain to Source Voltage (Vdss)
1200 V

Purchase

Availability
152
Ships in 16 Days
152

Unit Price
$8.4036
Total Price
$33.6144
Minimum: 4
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1 - 4
$8.4036
5 - 19
$7.7691
20 - 24
$8.3049
25 - 29
$7.6986
30 - 89
$8.2767
90 - 149
$8.2062
150 +
$8.178

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