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STMICROELECTRONICS SCT50N120

SILICON CARBIDE POWER MOSFET 1200 V 65 A 59 MOHM (TYP. TJ = 150 C) IN AN HIP247 PACKAGE

Product Details

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Technical

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related specs
RoHS
Compliant
Lead Free
Lead Free
Mount
Through Hole
Case/Package
TO-247-3
Lifecycle Status
Production (Last Updated: 3 years ago)
Number of Channels
1
Rds On Max
0.069 Ω
Power Dissipation
318 W
Threshold Voltage
1.8 V
Input Capacitance
0 F
Gate to Source Voltage (Vgs)
25 V
Continuous Drain Current (ID)
65 A
Drain to Source Voltage (Vdss)
1200 V

Purchase

Availability
477
Ships in 16 Days
477

Unit Price
$25.3095
Total Price
$50.619
Minimum: 2
Multiples: 2
Quantity must be in multiples of 2
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1 - 9
$25.3095
10 - 29
$25.0134
30 - 59
$23.1381
60 - 599
$22.9971
600 +
$22.6869

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