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TEXAS INSTRUMENTS CSD18543Q3A

TI CSD18543Q3A N-channel NexFET power MOSFET, 60 V VDS, 60 A (Tc) drain current, RDS(on) 8.1 mΩ @10 V, 66 W power dissipation (Tc), single FET, 8-lead VSONP (3.3 x 3.3 mm) surface-mount, operating −55 to 150 °C

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Lifecycle Status
Production (Last Updated: 2 days ago)
Power Dissipation
66 W
Gate to Source Voltage (Vgs)
20 V
Continuous Drain Current (ID)
35 A
Drain to Source Voltage (Vdss)
60 V

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